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Data Sheet
10V Drive Nch MOSFET
RCD040N25
? Structure
? Dimensions (Unit : mm)
Silicon N-channel MOSFET
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
? Features
1) Low on-resistance.
2) High-speed switching.
0.75
3) Wide range of SOA.
4) Drive circuits can be simple.
0.9 2.3
(1)
(2)
(3)
0.65
2.3
0.5
5) Parallel use is easy.
? Application
Switching
? Packaging specifications
Package
Taping
? Inner circuit
1.0
Type
Code
TL
Basic ordering unit (pieces)
RCD040N25
2500
?
(1) Gate
? 1
? Absolute maximum ratings (Ta = 25 ? C)
Parameter Symbol
Limits
Unit
(2) Drain
(3) Source
(1)
(2)
? 1 BODY DIODE
(3)
Drain-source voltage
Gate-source voltage
V DSS
V GSS
250
? 30
V
V
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
*3
*1,3
*1
? 4
? 16
4
16
A
A
A
A
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
I AS *2
E AS *2
P D *4
Tch
Tstg
2
1.61
20
150
? 55 to ? 150
A
mJ
W
? C
? C
*1 Pw ? 10 ? s, Duty cycle ? 1%
*2 L
500 ? H, V DD =50V, R G =25 ? , T ch =25 ? C
*3 Limited only by maximum channel temperature allowed.
*4 T C =25 ? C
? Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c) *
Limits
6.25
Unit
? C / W
* T C =25°C
* Limited only by maximum channel temperature allowed.
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? 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.11 - Rev.A
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